M58MR032C |
RFQ for M58MR032C Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| M58MR032C | - | - | - |
The M58MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. The device supports synchronous burst read and asynchronous read from all the blocks of the memory array; at power-up the device is configured for page mode read. In synchronous burst mode, a new data is output at each clock cycle for frequencies up to 40MHz.
The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power-up. Blocks can be unprotected to make changes in the application and then re-protected.
A parameter block "Security block" can be permanently protected against programming and erasing in order to increase the data security. An optional 12V VPP power supply is provided to speed up the program phase at costumer production. An internal command interface (C.I.) decodes the instructions to access/modify the memory content. The program/erase controller (P/E.C.) automatically executes the algorithms taking care of the timings necessary for program and erase operations. Two status registers indicate the state of each bank.
Instructions for Read Array, Read Electronic Signature, Read Status Register, Clear Status Register, Write Read Configuration Register, Program, Block Erase, Bank Erase, Program Suspend, Program Resume, Erase Suspend, Erase Resume, Block Protect, Block Unprotect, Block Locking, Protection Program, CFI Query, are written to the memory through a Command Interface (C.I.) using standard micro-processor write timings.
The memory is offered in TFBGA48, 0.5 mm ball pitch packages and it is supplied with all the bits erased (set to '1').
Features |
| SUPPLY VOLTAGE VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ Burst mode Read: 40MHz Page mode Read (4 Words Page) Random Access: 100ns PROGRAMMING TIME 10s by Word typical Two or four words programming optionMEMORY BLOCKS Dual Bank Memory Array: 8/24 Mbit Parameter Blocks (Top or Bottom location)DUAL OPERATIONS Read within one Bank while Program or Erase within the other No delay between Read and Write operationsPROTECTION/SECURITY All Blocks protected at Power-up Any combination of Blocks can be protected 64 bit unique device identifier 64 bit user programmable OTP cells One parameter block permanently lockableCOMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, M58MR032C: 88DAh Bottom Device Code, M58MR032D: 88DBh |
|
Symbol |
Parameter |
Value |
Unit |
|
TA |
Ambient Operating Temperature (2) |
40 to 85 |
°C |
|
TBIAS |
Temperature Under Bias |
40 to 125 |
°C |
|
TBIAS |
Storage Temperature |
55 to 155 |
°C |
|
VIO(3) |
Input or Output Voltage |
0.5 to VDDQ+0.5 |
V |
|
VDD, VDDQ |
Supply Voltage |
0.5 to 2.7 |
V |
|
VPP |
Program Voltage |
0.5 to 13 |
V |
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality docume
